A study of deep level in bulkn‐InP by transient spectroscopy
作者:
S. R. McAfee,
F. Capasso,
D. V. Lang,
A. Hutchinson,
W. A. Bonner,
期刊:
Journal of Applied Physics
(AIP Available online 1981)
卷期:
Volume 52,
issue 10
页码: 6158-6164
ISSN:0021-8979
年代: 1981
DOI:10.1063/1.328515
出版商: AIP
数据来源: AIP
摘要:
We report a study of bulkn‐InP by deep level transient spectroscopy. Measurements were made onp+njunction diodes and Schottky barriers in which both electron and hole traps were present. The effects of Zn diffusion, phosphorus partial pressure, and relatively low‐temperature heat treatment were studied. Results indicate the presence of uniformly distributed traps as well as nonuniform traps with higher concentration near the junction in the presence of Zn diffusion. Results further indicate significant changes in the thermally induced trap concentration associated with the removal of excess phosphorus. Significant changes in the trap spectra were also seen at temperatures below that typically used for Zn diffusion and may have important consequences in device fabrication.
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