Electronic transport investigations on silicon damaged by arsenic ion implantation
作者:
H. Jaouen,
G. Ghibaudo,
C. Christofide`s,
期刊:
Journal of Applied Physics
(AIP Available online 1986)
卷期:
Volume 60,
issue 5
页码: 1699-1704
ISSN:0021-8979
年代: 1986
DOI:10.1063/1.337260
出版商: AIP
数据来源: AIP
摘要:
Electronic transport properties of heavily doped arsenic implanted silicon are reported. Hall mobility and sheet resistance as functions of temperature and frequency have been carried out both on annealed and as‐implanted silicon films. The small values of the observed Hall mobility and strong frequency dependence of the transport coefficients emphasize the drastic alteration of nonannealed material. A semiquantitative analysis of the results is conducted using both short‐range and long‐range disorder considerations (hopping and percolation).
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