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Evidence for Damage Regions in Si, GaAs, and InSb Semiconductors Bombarded with High‐Energy Neutrons

 

作者: M. Bertolotti,   T. Papa,   D. Sette,   G. Vitali,  

 

期刊: Journal of Applied Physics  （AIP Available online 1967）
卷期: Volume 38, issue 6  

页码: 2645-2647

 

ISSN:0021-8979

 

年代: 1967

 

DOI:10.1063/1.1709962

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Evidence is reported for the existence of damage regions in Si, GaAs, and InSb irradiated with mono‐energetic 14‐MeV neutrons. The regions were revealed by using a chemical etch and observing carbon replicas of the surface with an electron microscope.

 

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