Voltage contrast imaging of barriers in ceramic semiconductors
作者:
K. L. Chopra,
Bharat Bhushan,
S. C. Kashyap,
期刊:
Journal of Applied Physics
(AIP Available online 1983)
卷期:
Volume 54,
issue 3
页码: 1610-1612
ISSN:0021-8979
年代: 1983
DOI:10.1063/1.332145
出版商: AIP
数据来源: AIP
摘要:
Potential barriers responsible for nonlinear conduction in ZnO ceramic semiconductors (cersems) have been observed by both the intensity andY‐modulation voltage contrast secondary electron microscopy techniques. The barriers exist at a grain‐intergranular interface and extend into the conducting ZnO grains. The applied voltage is distributed uniformly across the barriers. No electrical shorting of the barriers has been observed at fields exceeding the breakdown.
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