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A note on the analysis of space‐charge‐limited current data

 

作者: Richard H. Jarman,  

 

期刊: Journal of Applied Physics  （AIP Available online 1986）
卷期: Volume 60, issue 3  

页码: 1210-1211

 

ISSN:0021-8979

 

年代: 1986

 

DOI:10.1063/1.337790

 

出版商: AIP

 

数据来源: AIP

 

摘要:

By reference to recent data on amorphous silicon, it is shown that the measurement of the temperature dependence of the current in the space‐charge‐limited regime leads to a determination of the trap density and distribution, and the product of the free‐carrier mobility and density of extended states.

 

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