We have investigated the transport properties of a two‐dimensional electron gas formed in delta‐doped In0.53Ga0.47As grown by metalorganic chemical vapor deposition technique. Very high free‐electron concentrations of 1.4×1013and 9.6×1012cm−2have been obtained at 300 and 77 K, respectively. Hall mobilities of 9300 and 14 600 cm2/V s were measured with carrier concentrations of 3.7×1012and 3.0×1012cm−2at 300 and 77 K, respectively. This is a factor of 3 higher than is expected for homogeneously doped materials having a similar doping. Schubnikov–de Haas oscillations confirmed the two‐dimensional nature of the electronic structure in these delta‐doped materials, and electron effective masses were determined from cyclotron resonance measurements.