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Roughness analysis of Si/SiGe heterostructures

 

作者: R. M. Feenstra,   M. A. Lutz,   Frank Stern,   K. Ismail,   P. M. Mooney,   F. K. LeGoues,   C. Stanis,   J. O. Chu,   B. S. Meyerson,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1995）
卷期: Volume 13, issue 4  

页码: 1608-1612

 

ISSN:1071-1023

 

年代: 1995

 

DOI:10.1116/1.587865

 

出版商: American Vacuum Society

 

关键词: HETEROSTRUCTURES;SILICON;GERMANIUM;SILICIDES;SURFACE STRUCTURE;ROUGHNESS;MISFIT DISLOCATIONS;ATOMIC FORCE MICROSCOPY;CARRIER MOBILITY;ELECTRON−IMPURITY INTERACTIONS;Si;(Si,Ge)

 

数据来源: AIP

 

摘要:

Atomic force microscopy is used to measure surface morphology of modulation doped Si/SiGe heterostructures. Three components in the surface roughness are observed: μm‐scale roughness arising from misfit dislocations formed to relieve strain, 1000‐Å‐scale roughness believed to be associated with three‐dimensional growth of the electron or hole channel layers, and atomic‐scale roughness with wavelengths of 10–100 Å. Detailed Fourier spectra of the roughness are obtained and used as input to a scattering computation for determining mobility. The results are compared with other mobility‐limiting mechanisms, including scattering from ionized impurities and from dislocations.

 

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