Analysis of subsurface damage in silicon by a combined photothermal and photoluminescence heterodyne measurement
作者:
H. D. Geiler,
H. Karge,
M. Wagner,
A. Ehlert,
M. Kerstan,
D. Helmreich,
期刊:
Journal of Applied Physics
(AIP Available online 1997)
卷期:
Volume 81,
issue 11
页码: 7548-7551
ISSN:0021-8979
年代: 1997
DOI:10.1063/1.365351
出版商: AIP
数据来源: AIP
摘要:
A nondestructive evaluation technique based on the detection of the real part of the excess charge carrier wave by photoluminescence in a frequency range from 5 kHz up to 12 MHz is introduced for semiconductor defect analysis. Crystalline imperfections in silicon due to wafer manufacturing and processing are investigated and the results are correlated with those obtained from conventional photothermal measurements. ©1997 American Institute of Physics.
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