Thermal equilibrium of Ge-related defects in aGeO2-SiO2glass
作者:
Masahide Takahashi,
Takumi Fujiwara,
Taiji Kawachi,
Akira J. Ikushima,
期刊:
Applied Physics Letters
(AIP Available online 1998)
卷期:
Volume 72,
issue 11
页码: 1287-1289
ISSN:0003-6951
年代: 1998
DOI:10.1063/1.121052
出版商: AIP
数据来源: AIP
摘要:
In a15.7 GeO2⋅84.3 SiO2glass prepared by a vapor axial deposition method, optical absorptions at 4.92 and 5.08 eV were observed from 300 to 600 K. The results were then compared with electron spin resonance (ESR) measurement using the same samples. The absorption at 4.92 eV was found to increase with increasing temperature, while the optical absorption at 5.08 eV decreased with increasing temperature. These changes of optical absorption indicate that the concentration of neutral oxygen monovacancy is reduced at higher temperatures. The changes were quite reversible with the temperature. Concentration ofGe E′center, estimated from ESR, increased with increasing temperature, which is in contrast with the decrease of neutral oxygen monovacancy. The present result strongly suggests the thermal equilibrium reaction between neutral oxygen monovacancy andGe E′center. ©1998 American Institute of Physics.
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