Bismuth and antimony adsorption on III–V(110) substrates: Growth, order, and structure
作者:
W. K. Ford,
T. Guo,
S. L. Lantz,
K. Wan,
S.‐L. Chang,
C. B. Duke,
D. L. Lessor,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena
(AIP Available online 1990)
卷期:
Volume 8,
issue 4
页码: 940-947
ISSN:0734-211X
年代: 1990
DOI:10.1116/1.584947
出版商: American Vacuum Society
关键词: III−V SEMICONDUCTORS;BISMUTH;ANTIMONY;ADSORPTION;FILM GROWTH;INTERFACE STRUCTURE;ELECTRON DIFFRACTION;AUGER ELECTRON SPECTROSCOPY;GaAs;InP;GaSb;InAs;InSb;Bi;Sb
数据来源: AIP
摘要:
The adsorption characteristics of bismuth and antimony on III–V(110) substrates have been studied as a function of overlayer coverage and deposition conditions using low energy electron diffraction (LEED). We examine the different roles of chemical bonding and atomic size for determining surface ordering phenomena and epitaxy in these systems. LEED and Auger data were collected for monolayer range film thicknesses prepared on GaAs, InP, GaSb, InAs, and InSb substrates cleavedinsitu. BothIVand diffraction spot profiles were measured. Our results indicate that significant differences exist between the structure and surface chemical bonding of antimony and bismuth to III–V materials which were not revealed from previous studies using GaAs alone.
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