Gettering of iron by oxygen precipitates
作者:
H. Hieslmair,
A. A. Istratov,
S. A. McHugo,
C. Flink,
T. Heiser,
E. R. Weber,
期刊:
Applied Physics Letters
(AIP Available online 1998)
卷期:
Volume 72,
issue 12
页码: 1460-1462
ISSN:0003-6951
年代: 1998
DOI:10.1063/1.120592
出版商: AIP
数据来源: AIP
摘要:
In order to better understand and model internal gettering of iron in silicon, a quantitative investigation of iron precipitation in silicon containing different oxygen precipitate densities was performed. The number of iron precipitation sites was obtained from the iron precipitation kinetics using Ham’s Law. At low temperatures, the iron precipitate density corresponded to the oxygen precipitate density. A strong temperature dependence of the iron precipitate density was observed for the samples with larger oxygen precipitate densities. These data were used to simulate iron precipitation during a slow cool. From those simulations, optimal cooling rates were obtained for different silicon materials assuming various iron precipitation site densities in the epitaxial layer. ©1998 American Institute of Physics.
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