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Sputtering of silicon nitride with hydrogen ions

 

作者: P. C. Zalm,   L. J. Beckers,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1984）
卷期: Volume 2, issue 1  

页码: 84-85

 

ISSN:0734-211X

 

年代: 1984

 

DOI:10.1116/1.582922

 

出版商: American Vacuum Society

 

关键词: silicon nitrides;hydrogen ions 1 plus;chemical reaction yield;hydrogen ions 2 plus;etching;ev range 10−100;kev range 01−10;auger electron spectroscopy;experimental data;Si3N4

 

数据来源: AIP

 

摘要:

The possibility of using hydrogen as a substitute for halogen gases in dry etching processes is discussed. Etch rates for Si, SiO2, and Si3N4are compared.(AIP)

 

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