Photoluminescence studies of the effects of interruption during the growth of single GaAs/Al0.37Ga0.63As quantum wells
作者:
R. C. Miller,
C. W. Tu,
S. K. Sputz,
R. F. Kopf,
期刊:
Applied Physics Letters
(AIP Available online 1986)
卷期:
Volume 49,
issue 19
页码: 1245-1247
ISSN:0003-6951
年代: 1986
DOI:10.1063/1.97427
出版商: AIP
数据来源: AIP
摘要:
Low‐temperature excitation and photoluminescence spectra are described for single GaAs/Al0.37Ga0.63As quantum wells grown by molecular beam epitaxy with and without a 2‐min interruption of growth at the heterointerfaces. The spectra from samples grown with interruption include well‐resolved multiple sharp peaks which are due to changes in well thickness of one monolayer and to bound excitons. These peaks are as narrow as 1.0, 1.7, and 6.0 meV for single wells of width 57, 28, and 17 A˚, respectively.
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