The electrical properties of chromium-related defects in GaP are investigated. Using deep-level transient spectroscopy, a related deep level is observed inp-type GaP exhibiting an activation energy, associated with hole emission, of 0.5 eV. Detailed capacitance transient investigations were undertaken to study the electric field dependence. This emission rate which is found to have a field dependence can be fitted by a Poole–Frenkel model. Evidence is given that the trap is theCr4+/3+deep donor level in GaP caused by substitutional Cr on Ga sites. This trap seems to be well adapted to compensate donors for the growth of the semi-insulating GaP. ©1998 American Institute of Physics.