Thermal desorption of Si clusters from Si and Si-deposited Ta surfaces
作者:
Hideyuki Tanaka,
Toshihiko Kanayama,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1997)
卷期:
Volume 15,
issue 5
页码: 1613-1617
ISSN:1071-1023
年代: 1997
DOI:10.1116/1.589558
出版商: American Vacuum Society
关键词: Si;Ta
数据来源: AIP
摘要:
We performed quadrupole mass spectrometry (QMS) of Si clusters that thermally desorbed from various surfaces in ultrahigh vacuum. To investigate the effect of substrate on cluster formation, different kinds of substrates were prepared: Si(100) wafers, Si(111) wafers, and Si-deposited Ta polycrystalline sheets. When Si wafers were heated at 900–1300 °C, QMS spectra showed that clusters up toSi6sublimed from the surfaces. Both of (100) and (111) had the same activation energy for desorption of the clusters. On the contrary, QMS spectra from Si-deposited Ta at 1500 °C showed monomeric Si only. These results agree with the thermodynamic consideration that the desorption rate of each cluster is determined by its formation energy. The relation of cluster formation with the surface structure is also discussed.
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