Epitaxial growth of ZnS on bare and arsenic-passivated vicinal Si(100) surfaces
作者:
Xiaochuan Zhou,
Shan Jiang,
Wiley P. Kirk,
期刊:
Journal of Applied Physics
(AIP Available online 1997)
卷期:
Volume 82,
issue 5
页码: 2251-2262
ISSN:0021-8979
年代: 1997
DOI:10.1063/1.366031
出版商: AIP
数据来源: AIP
摘要:
We report a detailed study of molecular beam epitaxial growth of ZnS films on bare and arsenic-passivated vicinal Si(100) surfaces. This study elucidates the initiation of microtwinning and stacking-fault defects on double-stepped substrate surfaces. The study also sheds light on the function of arsenic passivation in reducing crystal defects in ZnS epitaxial layers. Three substrate surfaces, Si(100)2×1,Si(100):As2×1,and Si(100):As1×2,were used for the ZnS epitaxial growth studies. Adsorption experiments were performed to demonstrate the chemical passivation effect of an arsenic overlayer. Reflection high-energy electron diffraction was used to study growth modes and the epitaxial relationship of the ZnS layers to the substrates. Transmission electron microscopy was used to study the crystal-defect structures. Secondary ion mass spectroscopy was used to determine the chemical profiles of the heteroepitaxial interfaces of ZnS layers grown on arsenic-passivated surfaces. One of the main results demonstrated by this work is that thin ZnS films can be grown epitaxially with much better crystal quality on As-passivated Si surfaces than on bare Si surfaces. ©1997 American Institute of Physics.
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