Laser melting processes have been studied extensively, particularly for semiconductor substrates. Values for the velocity of the melt front have been determined by several experimental methods, and also calculated in numerical simulations of the melting processes. The velocity of the melt both during melting and recrystallization is of direct consequences for the material properties of the laser treated zone. Hence, a clear understanding of the physical parameters involved is essential. For laser pulses of a Gaussian shape, and whose duration is longer than a few tens of nanoseconds, expressions are derived for the melt‐front velocity for the general case and for the limiting case of a point source. In either case the velocity turns out to be nonconstant. Hence, experimentally reported values may only be regarded as indicative of the maximum velocity achievable. The simple closed‐form analytical expressions obtained in the present study are amenable for a direct analysis of relevant experimental results. Comparison made with some available data reveals a general agreement between theory and experiment. Ultra high‐speed photography is one possible technique that may enable observation of the varying velocity of the lateral melt front.