Near‐surface defects formed during rapid thermal annealing of preamorphized and BF+2‐implanted silicon
作者:
T. Sands,
J. Washburn,
R. Gronsky,
W. Maszara,
D. K. Sadana,
G. A. Rozgonyi,
期刊:
Applied Physics Letters
(AIP Available online 1984)
卷期:
Volume 45,
issue 9
页码: 982-984
ISSN:0003-6951
年代: 1984
DOI:10.1063/1.95446
出版商: AIP
数据来源: AIP
摘要:
Near‐surface defects formed during rapid thermal annealing (950–1150 °C, 10 s) of preamorphized and BF+2‐implanted (100) Si have been studied by a combination of cross‐sectional transmission electron microscopy and secondary‐ion mass spectrometry. Two types of defects are identified: fine clusters (1.5–4 nm in diameter) are shown to be related to fluorine, and stacking faults are correlated with the presence of both excess boron above the solid solubility limit and fluorine. In addition, the peak fluorine concentration is found to be lower in samples which contain a high density (∼108cm−2) of ‘‘hairpin’’ dislocations, indicating that a pipe diffusion mechanism for the rapid out‐diffusion of fluorine may be operative.
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