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Enhancement of deep acceptor activation in semiconductors by superlattice doping

 

作者: E. F. Schubert,   W. Grieshaber,   I. D. Goepfert,  

 

期刊: Applied Physics Letters  （AIP Available online 1996）
卷期: Volume 69, issue 24  

页码: 3737-3739

 

ISSN:0003-6951

 

年代: 1996

 

DOI:10.1063/1.117206

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The thermal activation of acceptors in wide‐gap semiconductors can be very low due to large acceptor activation energies. It is shown that superlattice doping, i.e., the composition modulation of a uniformly doped ternary semiconductor, can enhance the acceptor activation by more than one order of magnitude. ©1996 American Institute of Physics.

 

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