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Microstructure change in SiC whiskers after high-temperature annealing

 

作者: Y.C. Zhou,   X. Chang,   J. Zhou,   F. Xia,   C.H. Shih,  

 

期刊: Philosophical Magazine Letters  （Taylor Available online 1991）
卷期: Volume 63, issue 1  

页码: 19-22

 

ISSN:0950-0839

 

年代: 1991

 

DOI:10.1080/09500839108206596

 

出版商: Taylor & Francis Group

 

数据来源: Taylor

 

摘要:

The microstructure of as-received and post-annealed SiC whiskers were investigated by transmission electron microscopy. In the as-received SiC whiskers, the thinner β-SiC parts were jointed with the one-dimensional disordered parts by {111}, twin boundaries. After annealing, β-SiC parts became coarser than the one-dimensional disordered parts at 1900°C and then disappeared at 2000°C.

 

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