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Scanning force microscopy for the study of domain structure in ferroelectric thin films

 

作者: A. Gruverman,   O. Auciello,   H. Tokumoto,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  (AIP Available online 1996)
卷期: Volume 14, issue 2  

页码: 602-605

 

ISSN:1071-1023

 

年代: 1996

 

DOI:10.1116/1.589143

 

出版商: American Vacuum Society

 

关键词: THIN FILMS;FERROELECTRIC MATERIALS;PZT;SOL−GEL PROCESS;DOMAIN STRUCTURE;SPATIAL RESOLUTION;THICKNESS;MICROSCOPY;PZT

 

数据来源: AIP

 

摘要:

A piezoresponse technique based on scanning force microscopy (SFM) has been used for studying domain structure in ferroelectric thin films. Studies were performed on Pb(Zrx,Ti1−x)O3(PZT) thin films produced by a sol–gel method. The piezoresponse images of the PZT films were taken before and after inducing polarization in the films by applying a direct current voltage between the bottom electrode and the SFM tip. Polarization induced patterns were written with 20 V pulses and subsequently imaged by the SFM piezoresponse technique. The effect of the film structure on the imaging resolution of domains is discussed.

 

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