Scanning force microscopy for the study of domain structure in ferroelectric thin films
作者:
A. Gruverman,
O. Auciello,
H. Tokumoto,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1996)
卷期:
Volume 14,
issue 2
页码: 602-605
ISSN:1071-1023
年代: 1996
DOI:10.1116/1.589143
出版商: American Vacuum Society
关键词: THIN FILMS;FERROELECTRIC MATERIALS;PZT;SOL−GEL PROCESS;DOMAIN STRUCTURE;SPATIAL RESOLUTION;THICKNESS;MICROSCOPY;PZT
数据来源: AIP
摘要:
A piezoresponse technique based on scanning force microscopy (SFM) has been used for studying domain structure in ferroelectric thin films. Studies were performed on Pb(Zrx,Ti1−x)O3(PZT) thin films produced by a sol–gel method. The piezoresponse images of the PZT films were taken before and after inducing polarization in the films by applying a direct current voltage between the bottom electrode and the SFM tip. Polarization induced patterns were written with 20 V pulses and subsequently imaged by the SFM piezoresponse technique. The effect of the film structure on the imaging resolution of domains is discussed.
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