High‐temperature electrical properties of 3C‐SiC epitaxial layers grown by chemical vapor deposition
作者:
K. Sasaki,
E. Sakuma,
S. Misawa,
S. Yoshida,
S. Gonda,
期刊:
Applied Physics Letters
(AIP Available online 1984)
卷期:
Volume 45,
issue 1
页码: 72-73
ISSN:0003-6951
年代: 1984
DOI:10.1063/1.94973
出版商: AIP
数据来源: AIP
摘要:
Electrical properties of 3C‐SiC layers, epitaxially grown on silicon by chemical vapor deposition, have been investigated at the temperatures between room temperature and 850 °C. In this temperature range, the electron mobility changes with temperature as &mgr;H∼T−1.2∼−1.4. The weaker temperature dependence of mobility and the larger mobilities compared with other polytypes of SiC suggest that 3C‐SiC is a promising material for devices operated at high temperatures.
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