Chemical ordering in wurtziteInxGa1−xNlayers grown on (0001) sapphire by metalorganic vapor phase epitaxy
作者:
P. Ruterana,
G. Nouet,
W. Van der Stricht,
I. Moerman,
L. Considine,
期刊:
Applied Physics Letters
(AIP Available online 1998)
卷期:
Volume 72,
issue 14
页码: 1742-1744
ISSN:0003-6951
年代: 1998
DOI:10.1063/1.121170
出版商: AIP
数据来源: AIP
摘要:
A diffraction analysis in the transmission electron microscope was carried out onInxGa1−xNlayers grown on (0001) sapphire by metalorganic vapor phase epitaxy on top of thick GaN buffer layers. It is found that the ternaryInxGa1−xNlayers can be chemically ordered. The In and Ga atoms occupy, respectively, the two simple hexagonal sublattice sites related by the glide mirrors and helicoidal axes of theP63mc symmetry group of the wurtzite GaN. The symmetry of the ordered ternary is subsequently lowered by the disappearance of these operations, and it is shown to agree with the P3ml space group. ©1998 American Institute of Physics.
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