首页   按字顺浏览 期刊浏览 卷期浏览 Influence of Te concentration on the infrared cathodoluminescence of GaAs:Te wafers
Influence of Te concentration on the infrared cathodoluminescence of GaAs:Te wafers

 

作者: B. Me´ndez,   J. Piqueras,  

 

期刊: Journal of Applied Physics  （AIP Available online 1991）
卷期: Volume 69, issue 5  

页码: 2776-2779

 

ISSN:0021-8979

 

年代: 1991

 

DOI:10.1063/1.348636

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Cathodoluminescence (CL) scanning electron microscopy has been used to investigate the nature and distribution of defects involved in the infrared emission of GaAs:Te wafers. Spectral and CL‐contrast changes as a function of doping level have been found. Profiles of infrared CL intensity across the wafers show an inverted U shape.

 

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