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Oxygen as a surfactant in the growth of giant magnetoresistance spin valves

 

作者: W. F. Egelhoff,   P. J. Chen,   C. J. Powell,   M. D. Stiles,   R. D. McMichael,   J. H. Judy,   K. Takano,   A. E. Berkowitz,  

 

期刊: Journal of Applied Physics  (AIP Available online 1997)
卷期: Volume 82, issue 12  

页码: 6142-6151

 

ISSN:0021-8979

 

年代: 1997

 

DOI:10.1063/1.365620

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We have found a novel method for increasing the giant magnetoresistance (GMR) of Co/Cu spin valves with the use of oxygen. Surprisingly, spin valves with the largest GMR are not produced in the best vacuum. Introducing5×10−9Torr(7×10−7Pa) into our ultrahigh vacuum deposition chamber during spin-valve growth increases the GMR, decreases the ferromagnetic coupling between magnetic layers, and decreases the sheet resistance of the spin valves. It appears that the oxygen may act as a surfactant during film growth to suppress defects and to create a surface which scatters electrons more specularly. Using this technique, bottom spin valves and symmetric spin valves with GMR values of 19.0&percent; and 24.8&percent;, respectively, have been produced. These are the largest values ever reported for such structures. ©1997 American Institute of Physics.

 

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