Oxygen as a surfactant in the growth of giant magnetoresistance spin valves
作者:
W. F. Egelhoff,
P. J. Chen,
C. J. Powell,
M. D. Stiles,
R. D. McMichael,
J. H. Judy,
K. Takano,
A. E. Berkowitz,
期刊:
Journal of Applied Physics
(AIP Available online 1997)
卷期:
Volume 82,
issue 12
页码: 6142-6151
ISSN:0021-8979
年代: 1997
DOI:10.1063/1.365620
出版商: AIP
数据来源: AIP
摘要:
We have found a novel method for increasing the giant magnetoresistance (GMR) of Co/Cu spin valves with the use of oxygen. Surprisingly, spin valves with the largest GMR are not produced in the best vacuum. Introducing5×10−9Torr(7×10−7Pa) into our ultrahigh vacuum deposition chamber during spin-valve growth increases the GMR, decreases the ferromagnetic coupling between magnetic layers, and decreases the sheet resistance of the spin valves. It appears that the oxygen may act as a surfactant during film growth to suppress defects and to create a surface which scatters electrons more specularly. Using this technique, bottom spin valves and symmetric spin valves with GMR values of 19.0&percent; and 24.8&percent;, respectively, have been produced. These are the largest values ever reported for such structures. ©1997 American Institute of Physics.
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