GRT model for random telegraph signals in MOSFETS
作者:
J. Sikula,
P. Vasina,
R. Kolarova,
J. Pavelka,
C. Clayes,
E. Simoen,
J. Brini,
G. Kamarinos,
期刊:
AIP Conference Proceedings
(AIP Available online 1999)
卷期:
Volume 466,
issue 1
页码: 96-101
ISSN:0094-243X
年代: 1999
DOI:10.1063/1.58294
出版商: AIP
数据来源: AIP
摘要:
This paper investigates the emission and capture kinetics of random telegraph signals (RTS) in MOSFETs. A modified two-step approach is proposed which includes the capture of a carrier by trap located at theSi-SiO2interface, followed by a tunneling process of the trapped carrier between the interface trap and a trap located in theSiO2layer. In this case the quantum transitions represent a primary process which involves three basic states. In some cases this can be approximated by a two states g-r processX2(t),which coincides with a secondary process Y(t) representing current modulation. It is shown that by this model a quadratic dependence of the capture rate on the drain current can be explained, provided that the quasi-Fermi level at the surface is below the interface trap level. From the presented model the ratio of interface trap cross-section and oxide trap cross-section determines the capture and emission time. ©1999 American Institute of Physics.
点击下载:
PDF
(310KB)
返 回