Improvement in gate oxide integrity on thin-film silicon-on-insulator substrates by lateral gettering
作者:
S. Q. Hong,
T. Wetteroth,
H. Shin,
S. R. Wilson,
D. Werho,
T.-C. Lee,
D. K. Schroder,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 71,
issue 23
页码: 3397-3399
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.120347
出版商: AIP
数据来源: AIP
摘要:
Lateral gettering is implemented in thin-film silicon-on-insulator (TFSOI) substrates by introducing crystalline defects in the vicinity of metal-oxide-semiconductor device channel regions prior to gate oxidation. As a result of the gettering a significant improvement in gate oxide integrity is achieved, with increased oxide breakdown voltages and charge-to-breakdowns, as well as a reduction in localized oxide charge trapping. The same gettering effect on separation-by-implantation-of-oxygen and bonded silicon-on-insulator substrates suggests that the lack of effective gettering is mainly responsible for the oxide degradation regardless of the TFSOI type. This work also demonstrates the feasibility of achieving bulk-comparable gate oxides on TFSOI substrates. ©1997 American Institute of Physics.
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