Phase separation in InGaN thick films and formation of InGaN/GaN double heterostructures in the entire alloy composition
作者:
R. Singh,
D. Doppalapudi,
T. D. Moustakas,
L. T. Romano,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 70,
issue 9
页码: 1089-1091
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.118493
出版商: AIP
数据来源: AIP
摘要:
We report the growth of InGaN thick films and InGaN/GaN double heterostructures by molecular beam epitaxy at the substrate temperatures 700–800 °C, which is optimal for the growth of GaN. X-ray diffraction and optical absorption studies show phase separation of InN forInxGal−xNthick films with x>0.3. On the other hand,InxGal−xN/GaNdouble heterostructures show no evidence of phase separation within the detection capabilities of our methods. These observations were accounted for using Stringfellow’s model on phase separation, which gives a critical temperature for miscibility of the GaN–InN system equal to 2457 K.©1997 American Institute of Physics.
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