首页   按字顺浏览 期刊浏览 卷期浏览 Comment on ’’Energy gap in Si and Ge: Impurity dependence’’
Comment on ’’Energy gap in Si and Ge: Impurity dependence’’

 

作者: P. A. Sterne,   J. C. Inkson,  

 

期刊: Journal of Applied Physics  (AIP Available online 1981)
卷期: Volume 52, issue 10  

页码: 6432-6433

 

ISSN:0021-8979

 

年代: 1981

 

DOI:10.1063/1.328592

 

出版商: AIP

 

数据来源: AIP

 

摘要:

A recent paper by Mahan on energy‐gap narrowing in extrinsic semiconductors is compared and contrasted with a previous analysis by Inkson. It is found that, contrary to a statement by Mahan, the two papers rely on the same physical basis but use different means of calculation. The source of confusion is identified as the use of an inconsistent terminology.

 

点击下载:  PDF (124KB)



返 回