Comment on ’’Energy gap in Si and Ge: Impurity dependence’’
作者:
P. A. Sterne,
J. C. Inkson,
期刊:
Journal of Applied Physics
(AIP Available online 1981)
卷期:
Volume 52,
issue 10
页码: 6432-6433
ISSN:0021-8979
年代: 1981
DOI:10.1063/1.328592
出版商: AIP
数据来源: AIP
摘要:
A recent paper by Mahan on energy‐gap narrowing in extrinsic semiconductors is compared and contrasted with a previous analysis by Inkson. It is found that, contrary to a statement by Mahan, the two papers rely on the same physical basis but use different means of calculation. The source of confusion is identified as the use of an inconsistent terminology.
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