The behavior of the oxidation-induced stacking-fault ring (OSF ring) in Czochralski (CZ)-grown silicon crystals is predicted based on the dynamics of point defects during growth. Preexponential constants for the equilibrium point defect concentrations and diffusivities are determined by fitting the predictions of the model to a single set of experimental data for OSF-ring dynamics. Other experimental data is well fit by this model. Moreover, point defect properties used are consistent with other estimates. Asymptotic analysis of the point defect model leads to a closed-form expression for the dependence of the OSF-ring location on processing conditions and thermophysical properties of point defects at the melting temperature. These results indicate that differentiation between defect types in CZ-grown material can be done entirely on the basis of point defect dynamics. ©1997 American Institute of Physics.