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Charge transfer doping in amorphous semiconductor superlattices

 

作者: T. Tiedje,   B. Abeles,  

 

期刊: Applied Physics Letters  （AIP Available online 1984）
卷期: Volume 45, issue 2  

页码: 179-181

 

ISSN:0003-6951

 

年代: 1984

 

DOI:10.1063/1.95161

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Charge transfer doping of amorphous silicon by amorphous silicon nitride is demonstrated in amorphous semiconductor superlattice structures. The transfer‐doped material has lower gap‐state density and higher photoconductivity than conventional substitutionally doped material.

 

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