Lead zirconate titanate ferroelectric capacitors produced on sapphire and gallium arsenide substrates
作者:
R. Dat,
D.J. Lichtenwalner,
O. Auciello,
A.I. Kingon,
期刊:
Integrated Ferroelectrics
(Taylor Available online 1995)
卷期:
Volume 8,
issue 3-4
页码: 309-316
ISSN:1058-4587
年代: 1995
DOI:10.1080/10584589508219665
出版商: Taylor & Francis Group
关键词: PLAD;PZT;ferroelectric;fatigue;imprint;GaAs
数据来源: Taylor
摘要:
Pb(ZrxTi1−x)O3(PZT) based ferroelectric capacitors have been produced at 600°C on R-cut sapphire and Si-doped (100) GaAs substrates using a pulsed laser ablation deposition (PLAD) technique. La0.5Sr0.5CoO3(LSCO) conducting electrodes deposited using PLAD serve as top and bottom electrodes. X-ray diffraction results show that the PZT film is polycrystalline and phase-pure in both cases. Electrical characterization of the films show remanant polarization in excess of 20 μC/cm2. Results of long term properties show that these capacitors: are very tolerant to extremely large numbers of switching cycles; retain charges over very long periods of time; and do not show a strong tendency for their dipoles to be imprinted in a preferred direction.
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