Charge injection over triangular barriers in unipolar semiconductor structures
作者:
R. F. Kazarinov,
S. Luryi,
期刊:
Applied Physics Letters
(AIP Available online 1981)
卷期:
Volume 38,
issue 10
页码: 810-812
ISSN:0003-6951
年代: 1981
DOI:10.1063/1.92140
出版商: AIP
数据来源: AIP
摘要:
A theory of unipolar current over triangular barriers in semiconductor structures is developed. Diodes based on such barriers have been recently fabricated by molecular beam epitaxy using either variable‐gap or modulation‐doped semiconductors. In these diodes the current is due to unipolar injection of electrons. Exact analytic expression for current‐voltage characteristics is obtained. Comparison is made with recent experimental data.
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