Ion implanted metastable surface alloys in vanadium
作者:
H.W. Alberts,
O. Meyer,
J. Geerk,
期刊:
Radiation Effects
(Taylor Available online 1983)
卷期:
Volume 69,
issue 1-2
页码: 61-70
ISSN:0033-7579
年代: 1983
DOI:10.1080/00337578308221725
出版商: Taylor & Francis Group
数据来源: Taylor
摘要:
Vanadium single crystals have been low dose implanted with Ga-, Se-, Bi- and In-ions. Lattice positions have been determined with the channeling and backscattering technique. For Ga-, Bi-and In-atoms 100% substitutionality was observed. The Se-atoms were found to be slightly displaced from the substitutional lattice site. Furnace and pulsed electron beam annealing of the Se-implanted V-single crystals with energy densities insufficient for surface melting caused a further decrease of the substitutional fraction.
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