Pressure studies of tunneling processes through a doped barrier
作者:
T. Suski,
C. Gschlo¨ssl,
W. Demmerle,
J. Smoliner,
E. Gornik,
G. Bo¨hm,
G. Weimann,
期刊:
Applied Physics Letters
(AIP Available online 1991)
卷期:
Volume 59,
issue 19
页码: 2436-2438
ISSN:0003-6951
年代: 1991
DOI:10.1063/1.106013
出版商: AIP
数据来源: AIP
摘要:
We have investigated the influence of hydrostatic pressure on the tunneling processes between two independently contacted two‐dimensional electron gas systems which are separated by a doped AlGaAs barrier. For magnetotunneling data, the pressure dependence of the GaAs effective massm* was determined betweenp=0 and 10 kbar. In this range, we find a linear pressure dependence ofd(m*/me)/dp=8×10−4kbar−1for the electrons in the two‐dimensional channels. At higher pressures several new resonances are observed, which correspond to transition energies in the order of 4 meV. These effects are most probably explained by local phonon modes related to theDXcenters inside the barrier.
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