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Pressure studies of tunneling processes through a doped barrier

 

作者: T. Suski,   C. Gschlo¨ssl,   W. Demmerle,   J. Smoliner,   E. Gornik,   G. Bo¨hm,   G. Weimann,  

 

期刊: Applied Physics Letters  (AIP Available online 1991)
卷期: Volume 59, issue 19  

页码: 2436-2438

 

ISSN:0003-6951

 

年代: 1991

 

DOI:10.1063/1.106013

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We have investigated the influence of hydrostatic pressure on the tunneling processes between two independently contacted two‐dimensional electron gas systems which are separated by a doped AlGaAs barrier. For magnetotunneling data, the pressure dependence of the GaAs effective massm* was determined betweenp=0 and 10 kbar. In this range, we find a linear pressure dependence ofd(m*/me)/dp=8×10−4kbar−1for the electrons in the two‐dimensional channels. At higher pressures several new resonances are observed, which correspond to transition energies in the order of 4 meV. These effects are most probably explained by local phonon modes related to theDXcenters inside the barrier.

 

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