Measuring Ge segregation by real‐time stress monitoring during Si1−xGexmolecular beam epitaxy
作者:
J. A. Floro,
E. Chason,
期刊:
Applied Physics Letters
(AIP Available online 1996)
卷期:
Volume 69,
issue 25
页码: 3830-3832
ISSN:0003-6951
年代: 1996
DOI:10.1063/1.117119
出版商: AIP
数据来源: AIP
摘要:
Real‐time stress measurements during Si1−xGex/Si molecular beam epitaxy are used to dynamically monitor Ge surface segregation. Segregation during alloy growth produces a change in the surface stress that offsets the coherency stress in the pseudomorphic film. We outline a method for analyzing the stress evolution kinetics to determine the alloy composition profile resulting from segregation. ©1996 American Institute of Physics.
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