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Monolithic integration of an injection laser and a metal semiconductor field effect transistor

 

作者: I. Ury,   S. Margalit,   M. Yust,   A. Yariv,  

 

期刊: Applied Physics Letters  （AIP Available online 1979）
卷期: Volume 34, issue 7  

页码: 430-431

 

ISSN:0003-6951

 

年代: 1979

 

DOI:10.1063/1.90824

 

出版商: AIP

 

数据来源: AIP

 

摘要:

A new laser structure, the ’’T‐laser’’, has been monolithically integrated with a MESFET on a semi‐insulating GaAs substrate. Integration is achieved by means of a compatible structure in which the optically active layer of the laser also serves as the electrically active layer of the MESFET. Direct modulation of the laser by means of the transistor is demonstrated.

 

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