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Oriented Growth of Semiconductors. V. Surface Features and Twins in Epitaxial Gallium Arsenide

 

作者: H. Holloway,   L. C. Bobb,  

 

期刊: Journal of Applied Physics  (AIP Available online 1967)
卷期: Volume 38, issue 7  

页码: 2893-2896

 

ISSN:0021-8979

 

年代: 1967

 

DOI:10.1063/1.1710019

 

出版商: AIP

 

数据来源: AIP

 

摘要:

A study has been made of hillock‐like features which sometimes occur on {1, 0, 0} surfaces of epitaxial gallium arsenide. X‐ray diffraction topography reveals that the hillocks contain cores of twin which originate at, or near, the epitaxial interface. During growth of the layer the twins can become buried, leaving a surface which is matrix‐oriented.

 

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