Oriented Growth of Semiconductors. V. Surface Features and Twins in Epitaxial Gallium Arsenide
作者:
H. Holloway,
L. C. Bobb,
期刊:
Journal of Applied Physics
(AIP Available online 1967)
卷期:
Volume 38,
issue 7
页码: 2893-2896
ISSN:0021-8979
年代: 1967
DOI:10.1063/1.1710019
出版商: AIP
数据来源: AIP
摘要:
A study has been made of hillock‐like features which sometimes occur on {1, 0, 0} surfaces of epitaxial gallium arsenide. X‐ray diffraction topography reveals that the hillocks contain cores of twin which originate at, or near, the epitaxial interface. During growth of the layer the twins can become buried, leaving a surface which is matrix‐oriented.
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