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X‐ray double‐crystal diffraction studies of GaInAsP/InP heterostructures

 

作者: X. R. Wang,   X. Y. Chi,   H. Zheng,   Z. L. Miao,   J. Wang,   Z. S. Zhang,   Y. S. Jin,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1988）
卷期: Volume 6, issue 1  

页码: 34-36

 

ISSN:0734-211X

 

年代: 1988

 

DOI:10.1116/1.583995

 

出版商: American Vacuum Society

 

关键词: GALLIUM ARSENIDES;X−RAY DIFFRACTION ANALYSIS;STRAINS;CRYSTAL STRUCTURE;HETEROJUNCTIONS;GALLIUM PHOSPHIDES;ALUMINIUM PHOSPHIDES;ALUMINIUM ARSENIDES;THICKNESS;(Ga,In)(As,P);InP

 

数据来源: AIP

 

摘要:

The lattice mismatch and the half‐width of the rocking curves in GaInAsP epitaxial layers grown on (001) InP substrates have been determined by means of x‐ray double‐crystal diffractometry. The state of strain of GaInAsP epitaxial layers has also been investigated. The relaxed lattice constant of the epilayers in stress‐free states has been found from observed lattice deformation using strain relations.

 

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