Thin‐film homojunction gallium arsenide solar cells ofp+/n/n+configuration have been deposited on tungsten coated graphic substrates by the reaction of gallium, hydrogen chloride, and arsine containing appropriate dopants. Solar cells of 8‐cm2area with an AM1 efficiency of about 7% have been prepared for the first time. The solar cells are characterized by dark and illuminated current‐voltage and quantum efficiency measurements.