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AlGaAs double‐heterostructure diode lasers fabricated on a monolithic GaAs/Si substrate

 

作者: T. H. Windhorn,   G. M. Metze,   B‐Y. Tsaur,   John C. C. Fan,  

 

期刊: Applied Physics Letters  （AIP Available online 1984）
卷期: Volume 45, issue 4  

页码: 309-311

 

ISSN:0003-6951

 

年代: 1984

 

DOI:10.1063/1.95273

 

出版商: AIP

 

数据来源: AIP

 

摘要:

AlGaAs double‐heterostructure diode lasers have been fabricated for the first time on a monolithic GaAs/Si substrate. The heterostructure was prepared by growth of a series of GaAs and AlGaAs layers on a Ge‐coated Si wafer. For pulsed operation at 77 K the lowest threshold current was 260 mA, the highest power output was 1.8 mW per facet, and the highest differential quantum efficiency was 1.2%.

 

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