Some Electrical and Optical Effects of Dislocations in Semiconductors
作者:
M. Meyer,
M. H. Miles,
T. Ninomiya,
期刊:
Journal of Applied Physics
(AIP Available online 1967)
卷期:
Volume 38,
issue 11
页码: 4481-4486
ISSN:0021-8979
年代: 1967
DOI:10.1063/1.1709153
出版商: AIP
数据来源: AIP
摘要:
Optical measurements on silicon and germanium together with Hall measurements on germanium were performed on crystals containing predominantly edge or screw dislocation arrays. An apparent extended absorption tail in deformed germanium and silicon was found to depend markedly upon the direction of light propagation relative to the active slip planes. Photographs of the transmitted radiation through deformed silicon showed that the apparent extended absorption tail was due to strong anisotropic scattering from active slip planes. Hall measurements on sections from plastically deformed germainium are interpreted to give evidence of dislocation acceptors located in the lower half of the band gap.
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