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Photoluminescence of thermally treatedn‐type Si‐doped GaAs

 

作者: W. Y. Lum,   H. H. Wieder,  

 

期刊: Journal of Applied Physics  （AIP Available online 1978）
卷期: Volume 49, issue 12  

页码: 6187-6188

 

ISSN:0021-8979

 

年代: 1978

 

DOI:10.1063/1.324550

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Photoluminescence measurements on Si‐doped GaAs single crystals heat treated in vacuum at 400≲T≲800 °C reveal emission peaks at 1.363, 1.409, and 1.487 eV, which correspond to three acceptor levels introduced through the activation of vacancies and the site transfer of Si atoms during the annealing process.

 

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