Complete planarization of via holes with aluminum by selective and nonselective chemical vapor deposition
作者:
Kazuo Tsubouchi,
Kazuya Masu,
Nobuyuki Shigeeda,
Tatsuya Matano,
Yohei Hiura,
Nobuo Mikoshiba,
期刊:
Applied Physics Letters
(AIP Available online 1990)
卷期:
Volume 57,
issue 12
页码: 1221-1223
ISSN:0003-6951
年代: 1990
DOI:10.1063/1.103490
出版商: AIP
数据来源: AIP
摘要:
We have developed a new controllable method of selective and nonselective deposition of high quality aluminum by low‐pressure chemical vapor deposition using dimethylaluminum hydride with hydrogen. At first, silicon dioxide via holes on silicon substrate were selectively filled with aluminum by thermal decomposition. Then, adding the plasma excitation for 1 min, the aluminum film began to deposit nonselectively on the silicon dioxide as well as the selectively deposited aluminum. Silicon dioxide via holes were completely planarized by the selective and nonselective deposition. The single‐crystal structure of aluminum deposited selectively on silicon was observed with a new scanning microreflection high‐energy electron diffraction microscope.
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