AlGaAs/InGaAs/AlGaAs double pulse doped pseudomorphic high electron mobility transistor structures on InGaAs substrates
作者:
W. E. Hoke,
P. S. Lyman,
J. J. Mosca,
R. A. McTaggart,
P. J. Lemonias,
R. M. Beaudoin,
A. Torabi,
W. A. Bonner,
B. Lent,
L.-J. Chou,
K. C. Hsieh,
期刊:
Journal of Applied Physics
(AIP Available online 1997)
卷期:
Volume 82,
issue 7
页码: 3576-3580
ISSN:0021-8979
年代: 1997
DOI:10.1063/1.365676
出版商: AIP
数据来源: AIP
摘要:
Double pulse doped AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility transistor (PHEMT) structures have been grown onInxGa1−xAs(x=0.025–0.07)substrates using molecular beam epitaxy. A strain compensated, AlGaInAs/GaAs superlattice was used for improved resistivity and breakdown. Excellent electrical and optical properties were obtained for 110-Å-thick InGaAs channel layers with indium concentrations up to 31&percent;. A room temperature mobility of6860 cm2/V swith 77 K sheet density of4.0×1012 cm−2was achieved. The InGaAs channel photoluminescence intensity was equivalent to an analogous structure on a GaAs substrate. To reduce strain PHEMT structures with a composite InGaP/AlGaAs Schottky layer were also grown. The structures also exhibited excellent electrical and optical properties. Transmission electron micrographs showed planar channel interfaces for highly strainedIn0.30Ga0.70Aschannel layers. ©1997 American Institute of Physics.
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