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Characterization of hydrogen and oxygen atoms in SiN films produced by plasma‐enhanced reactive sputtering

 

作者: Iwao Sugimoto,   Keiichi Yanagisawa,   Hiroki Kuwano,   Satoko Nakano,   Akio Tago,  

 

期刊: Journal of Vacuum Science&Technology A: Vacuum, Surfaces, and Films  （AIP Available online 1994）
卷期: Volume 12, issue 5  

页码: 2859-2866

 

ISSN:0734-2101

 

年代: 1994

 

DOI:10.1116/1.578957

 

出版商: American Vacuum Society

 

关键词: SILICON NITRIDES;BINARY COMPOUNDS;THIN FILMS;REACTIVE SPUTTERING;ETCHING;REFRACTIVE INDEX;PRESSURE EFFECTS;OXYGEN ADDITIONS;HYDROGEN ADDITIONS;SiN

 

数据来源: AIP

 

摘要:

Silicon nitride films are prepared by helium‐excited magnetron radio‐frequency sputtering. Excitation energy transfer from He to N2and existence of hydrogenation and oxidation source (O+and OH⋅) in the plasmas are confirmed by optical emission spectroscopy. The structure and characteristics of the resultant films depend on the gas pressure during sputtering: Films produced at pressures above 5 Pa are etched rapidly in a buffered hydrogen fluoride solution and have low refractive indices because their structure is coarse and rich in oxygen and hydrogen or both.

 

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