“Resonant conducting” in nano-patterning the hydrogen-passivated Si(100) by atomic force microscopy
作者:
E. Z. Luo,
I. H. Wilson,
J. B. Xu,
J. X. Ma,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 71,
issue 14
页码: 2035-2037
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.119779
出版商: AIP
数据来源: AIP
摘要:
By monitoring the electric current image during conducting atomic force microscopy nano-patterning, a phenomenon that we term “resonant conducting” was found. This was characterized by a sharp peak atV=2.45±0.05 Vin the averaged current-voltage plot. The electrical current is irreversible and decays very rapidly after repeat scanning, which implies that the resonant current is associated with the transient process from a hydrogen de-passivation to an oxygen passivation under the specific electrical field. On the practical side, “resonant conducting” provides a very sensitive method for visualization of H passivation of silicon on a nano-meter scale. ©1997 American Institute of Physics.
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