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“Resonant conducting” in nano-patterning the hydrogen-passivated Si(100) by atomic force microscopy

 

作者: E. Z. Luo,   I. H. Wilson,   J. B. Xu,   J. X. Ma,  

 

期刊: Applied Physics Letters  (AIP Available online 1997)
卷期: Volume 71, issue 14  

页码: 2035-2037

 

ISSN:0003-6951

 

年代: 1997

 

DOI:10.1063/1.119779

 

出版商: AIP

 

数据来源: AIP

 

摘要:

By monitoring the electric current image during conducting atomic force microscopy nano-patterning, a phenomenon that we term “resonant conducting” was found. This was characterized by a sharp peak atV=2.45±0.05 Vin the averaged current-voltage plot. The electrical current is irreversible and decays very rapidly after repeat scanning, which implies that the resonant current is associated with the transient process from a hydrogen de-passivation to an oxygen passivation under the specific electrical field. On the practical side, “resonant conducting” provides a very sensitive method for visualization of H passivation of silicon on a nano-meter scale. ©1997 American Institute of Physics.

 

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