Defects in neutron irradiated SiC
作者:
V. Nagesh,
J. W. Farmer,
R. F. Davis,
H. S. Kong,
期刊:
Applied Physics Letters
(AIP Available online 1987)
卷期:
Volume 50,
issue 17
页码: 1138-1140
ISSN:0003-6951
年代: 1987
DOI:10.1063/1.97941
出版商: AIP
数据来源: AIP
摘要:
Deep level transient spectroscopy and resistivity measurements have been used to characterize defects in as‐grown and neutron irradiated epitaxially grown 3C‐SiC on Si(100) substrates. The thick epilayers were free of defects; neutron irradiation induced an electron trap with an activation energy of 0.49 eV. The SiC‐Si interface has a large density of defects and dislocations. Most of the irradiation defects are confined to the lower two‐thirds of the band gap. Ninety percent of these defects can be removed by annealing at 350 °C.
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