New low‐temperature (T∼200 K) elastic low‐energy electron diffraction (ELEED) intensity data obtained for ZnSe films grown epitaxially on GaAs(110) are analyzed using anR‐factor methodology. The differences between the measured ELEED intensities for ZnSe(110) and those for GaAs(110) reveal the possibility that these two surfaces may not exhibit comparable atomic geometries. A bond‐length‐conserving top‐layer rotation of the Se species outward and the Zn inward corresponding to ω1=4° provides a description of the measured intensities (Rx=0.22,RI=0.21) comparable to that afforded by the ZnSe(110) analog of the GaAs(110) structure (a relaxed version of an ω1=29° structure,Rx=0.24,RI=0.16). Since GaAs and ZnSe exhibit essentially identical bulk lattice constants, the possibility that their (110) surfaces exhibit different atomic geometries poses a puzzle within the framework of current understanding of this topic.