Effect of grain size and dislocation density on the performance of thin film polycrystalline silicon solar cells
作者:
Mitsuru Imaizumi,
Tadashi Ito,
Masafumi Yamaguchi,
Kyojiro Kaneko,
期刊:
Journal of Applied Physics
(AIP Available online 1997)
卷期:
Volume 81,
issue 11
页码: 7635-7640
ISSN:0021-8979
年代: 1997
DOI:10.1063/1.365341
出版商: AIP
数据来源: AIP
摘要:
Three kinds of important properties of the solar cell were calculated: short-circuit current density, open-circuit voltage, and conversion efficiency. Two equations which show the relationship between the minority-carrier diffusion length and the grain size or the etch pit density were used for the calculation. The dependence of the properties on the cell thickness were estimated as a function of grain size and etch-pit density. The effect of the internal reflectance with varying minority-carrier diffusion length was also examined. The results show that thin film polycrystalline silicon solar cells have the potential to attain an efficiency of 17&percent; even at a film thickness of 2 &mgr;m if the grain size is bigger than 10 &mgr;m and the etch-pit density of less than1×106 cm−2.The principal requirement is to achieve efficient light trapping. ©1997 American Institute of Physics.
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