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Effect of grain size and dislocation density on the performance of thin film polycrystalline silicon solar cells

 

作者: Mitsuru Imaizumi,   Tadashi Ito,   Masafumi Yamaguchi,   Kyojiro Kaneko,  

 

期刊: Journal of Applied Physics  (AIP Available online 1997)
卷期: Volume 81, issue 11  

页码: 7635-7640

 

ISSN:0021-8979

 

年代: 1997

 

DOI:10.1063/1.365341

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Three kinds of important properties of the solar cell were calculated: short-circuit current density, open-circuit voltage, and conversion efficiency. Two equations which show the relationship between the minority-carrier diffusion length and the grain size or the etch pit density were used for the calculation. The dependence of the properties on the cell thickness were estimated as a function of grain size and etch-pit density. The effect of the internal reflectance with varying minority-carrier diffusion length was also examined. The results show that thin film polycrystalline silicon solar cells have the potential to attain an efficiency of 17&percent; even at a film thickness of 2 &mgr;m if the grain size is bigger than 10 &mgr;m and the etch-pit density of less than1×106 cm−2.The principal requirement is to achieve efficient light trapping. ©1997 American Institute of Physics.

 

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